IRF7316PBF

FET, MOSFET Arrays Overview

The IRF7316PBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It is housed in an SOIC-8 surface-mount package and utilizes silicon technology. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 6.6 A at 25°C. The maximum on-resistance is specified as 29 mΩ at a gate-source voltage of 10 V. The component operates within a temperature range of -55°C to +150°C, with a total power dissipation capability of 2 W.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating one N-channel and one P-channel enhancement-mode transistor within a single compact package.
• Logic-level gate drive compatibility allowing operation with standard logic voltages for efficient switching control.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-voltage motor control circuits
• Power management modules requiring complementary switching pairs

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the SOIC-8 package dimensions and thermal resistance values align with the target PCB layout and cooling requirements. Ensure compliance with relevant environmental directives such as RoHS standards applicable to the manufacturing region.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a matched N/P-channel pair in a low-voltage environment. Evaluate the thermal performance based on the specified junction-to-ambient thermal resistance and expected power dissipation. Consider the gate charge parameters for driving circuit design to ensure adequate switching speeds without excessive losses.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. These devices are designed for high-efficiency power switching applications. The dual configuration simplifies board space utilization compared to using discrete individual transistors for complementary bridge configurations.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools or manufacturer databases for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFET packages without verifying pinout compatibility and electrical parameter limits.