FET, MOSFET Arrays IRF7317TRPBF product image

IRF7317TRPBF

  • Description:MOSFET N/P-CH 20V 6.6A/5.3A 8SO
  • Series:HEXFET®

SKU:19c5c9db08e4 Category: Brand:

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IRF7317TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 20V 6.6A/5.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7317TRPBF

  • Description:MOSFET N/P-CH 20V 6.6A/5.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.6A, 5.3A
  • Rds On (Max) @ Id, Vgs:29mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7317TRPBF

IRF7317TRPBF

FET, MOSFET Arrays Overview

The IRF7317TRPBF is a dual-channel power MOSFET array from Infineon Technologies, featuring one N-channel and one P-channel enhancement-mode transistor within an SOIC-8 surface-mount package. It operates with a drain-source breakdown voltage of 20 V and supports a continuous drain current of 6.6 A at 25°C. The device exhibits a maximum on-resistance of 29 mΩ and a gate charge of 18 nC. It functions reliably across a temperature range of -55°C to +150°C junction temperature, with a total power dissipation rating of 2 W.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel transistors in a single compact package for space-constrained designs.
  • Utilizes HEXFET technology to achieve low on-resistance and efficient switching performance.
  • Supports high thermal stability with a maximum junction temperature rating of 150°C.

FET, MOSFET Arrays Applications

  • Low-voltage DC/DC converter circuits
  • Power management integrated circuit output stages
  • Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm tape-and-reel packaging versus tube formats. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration. Ensure the component matches the required pinout and electrical ratings for the target application before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required for synchronous rectification or half-bridge configurations. Evaluate the 29 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the SOIC-8 footprint. Consider the 20 V voltage rating to ensure compatibility with system supply rails.

FET, MOSFET Arrays Part Context

This part belongs to the IRF73xx series of dual MOSFET arrays designed for low-voltage applications. It shares the SOIC-8 form factor with other variants in the family but differs in channel configuration and voltage ratings. The TRPBF suffix indicates a specific reel-based packaging format intended for automated assembly processes.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with IRF7317PBF for identical electrical specifications if tube packaging is acceptable. Verify that any substitute maintains the same 20 V rating and SOIC-8 pinout compatibility.

IRF7317TRPBFIRF7317TRPBF

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