IRF7319TR

FET, MOSFET Arrays Overview

The IRF7319TR is a dual N-channel and P-channel enhancement mode MOSFET manufactured by UMW. It features a maximum drain-source voltage of 30V for the N-channel and -30V for the P-channel. The device supports continuous drain currents of up to 6.5A for the N-channel and 4.9A for the P-channel at 25°C case temperature. Typical on-resistance values are 31mΩ for the N-channel and 60mΩ for the P-channel at VGS=10V. The component is housed in an SOP-8 package with dimensions of 5mm x 3.9mm and a height range of 1.35mm to 1.75mm. It operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating separate N-channel and P-channel MOSFETs in a single surface-mount package.
• Customized leadframe design in the SOP-8 package to enhance thermal dissipation characteristics.
• Capable of handling avalanche energy ratings, supporting robust operation under transient conditions.
• Built-in body diodes provide reverse current conduction paths for both channel types.

FET, MOSFET Arrays Applications

• Power management circuits requiring compact dual-switch solutions.
• Battery protection modules utilizing low-voltage switching capabilities.
• DC-DC converter topologies needing complementary high-side and low-side drive elements.

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer designation as UMW (UTD Semiconductor) rather than legacy brands when sourcing this specific part number. Confirm the package type is SOP-8 and check for tape and reel delivery modes if high-volume integration is required. Ensure technical specifications align with the provided datasheet parameters before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a combined N-P channel pair in a minimal footprint. Evaluate thermal performance based on the specified RθJA and power dissipation limits. Consider the gate charge characteristics for switching frequency requirements. Verify that the 30V voltage rating meets the system's operational headroom needs.

FET, MOSFET Arrays Part Context

This component belongs to the dual MOSFET category, specifically designed for low-voltage power switching. It serves as a space-saving alternative to using discrete N-channel and P-channel devices separately. The SOP-8 packaging facilitates automated surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing should be performed carefully against electrical parameters such as VDS, ID, and RDS(on) to ensure functional compatibility.