IRF7324TR

FET, MOSFET Arrays Overview

The UMW IRF7324TR is a dual P-channel MOSFET utilizing Trench Technology, housed in an SOP-8 package. It features a drain-source voltage rating of -20 V and a continuous drain current of -9.0 A at 25°C with VGS at -4.5V. The device exhibits ultra-low on-resistance, specified as 18 mΩ at VGS = -4.5V and 26 mΩ at VGS = -2.5V. Maximum power dissipation is rated at 2.0 W at 25°C ambient temperature, derating linearly to 1.3 W at 70°C. The junction temperature range spans from -55°C to +150°C, with a maximum junction-to-ambient thermal resistance of 62.5 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration within a single low-profile package
• Ultra-low on-resistance achieved through Trench Technology
• Compatible with 2.5V gate drive ratings

FET, MOSFET Arrays Applications

• Power management circuits requiring dual channel control
• Low-side switching applications for P-channel loads
• Battery protection and load switch designs

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code against manufacturer documentation to ensure correct package and delivery mode alignment. Confirm that the SOP-8 tape and reel quantity matches project requirements. Cross-reference electrical parameters with the official datasheet to validate performance under intended operating conditions before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component based on the required -20 V breakdown voltage and -9.0 A continuous current capability. Ensure the driving circuit can provide sufficient gate voltage swing, typically -4.5V or -2.5V, to achieve the specified low on-resistance values. Consider the thermal resistance and power dissipation limits when designing heat dissipation strategies for the SOP-8 package.

FET, MOSFET Arrays Part Context

This part belongs to the UMW dual MOSFET family, designed for compact power switching solutions. The IRF7324TR integrates two independent P-channel devices in one SOP-8 footprint, offering space savings compared to discrete components. It serves as a specialized alternative for applications needing matched dual channels with high efficiency and fast switching characteristics.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before substitution.