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IRF7324TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 9A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7324TRPBF
- Description：MOSFET 2P-CH 20V 9A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：2940pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7324TRPBF
FET, MOSFET Arrays Overview
The IRF7324TRPBF is a dual P-channel HEXFET power MOSFET in an SO-8 package. It features a -20V drain-source voltage and a continuous drain current of -9.0A at 25°C. The device exhibits an ultra-low on-resistance of 0.018Ω at VGS=-4.5V. It operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 2.0W.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration for load management
- Trench technology for low on-resistance
- Logic-level gate drive capability
FET, MOSFET Arrays Applications
- Battery management systems
- Load management circuits
- Power switching applications
FET, MOSFET Arrays Procurement Notes
Verify the component against the official Infineon datasheet specifications, specifically the -20V rating and 0.018Ω resistance. Confirm the SO-8 surface mount package and lead-free status. Ensure the ordering suffix matches the required tape and reel packaging format for automated assembly processes.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring compact dual P-channel switching with high efficiency. The low on-resistance minimizes conduction losses. Verify that the thermal environment supports the specified derating factors. Ensure the gate drive voltage meets the logic-level requirements for optimal performance.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET family, known for ruggedized design and advanced processing techniques. It utilizes trench technology to achieve superior performance per silicon area compared to older planar technologies. The device is designed for consumer market applications.
FET, MOSFET Arrays Replacement Considerations
IRF7324PbF
FET, MOSFET Arrays FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is -9.0A at an ambient temperature of 25°C.
Is the device suitable for logic-level driving?
Yes, it is rated for 2.5V operation, making it suitable for logic-level gate drive applications.
What is the thermal resistance from junction to ambient?
The maximum junction-to-ambient thermal resistance is 62.5°C/W.
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