IRF7328PBF

Description：MOSFET 2P-CH 30V 8A 8SO
Series：HEXFET®

SKU:feadf33d8264 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF7328PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 8A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7328PBF

Description：MOSFET 2P-CH 30V 8A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2675pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7328PBF

IRF7328PBF

FET, MOSFET Arrays Overview

The IRF7328PbF is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced trench technology to achieve low on-resistance per silicon area, providing high efficiency and reliability for battery and load management applications. The device is housed in an SO-8 surface-mount package and supports lead-free manufacturing. Key electrical characteristics include a drain-source voltage of -30V and a continuous drain current of -8.0A at 25°C with a gate-source voltage of -10V. The maximum power dissipation is rated at 2.0W at 25°C ambient temperature.

FET, MOSFET Arrays Feature Summary

Dual P-channel configuration integrated into a single compact SO-8 package
Advanced trench processing technology for minimized on-resistance
Ruggedized device design ensuring operational reliability
Lead-free product construction compliant with environmental standards

FET, MOSFET Arrays Applications

Battery management systems
Load management circuits
Power switching applications requiring dual channel control

FET, MOSFET Arrays Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm exact specifications and revisions. Ensure that the procurement source provides authentic Infineon or International Rectifier products. Check for RoHS compliance status and verify the specific ordering suffix if tape and reel packaging is required instead of tube packaging.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is needed within a small footprint. Consider the thermal resistance and power dissipation limits relative to the operating environment. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure proper turn-on characteristics under varying load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The series is characterized by the use of trench technology to optimize performance metrics such as on-resistance and switching speed. The IRF7328PbF specifically addresses the need for dual-channel integration in space-constrained designs.