IRF7328TRPBFXTMA1

FET, MOSFET Arrays Overview

The IRF7328TRPBFXTMA1 is a dual-channel, N-channel and P-channel enhancement-mode MOSFET from the Infineon HEXFET series. It features a SO-8 surface-mount package with eight pins. The device supports a drain-source voltage of 30 V. Continuous drain current ratings are specified at 4 A for the N-channel and 8 A for the P-channel. The maximum on-resistance is 80 mΩ for the N-channel and 32 mΩ for the P-channel. Gate-source voltage limits range from -20 V to +20 V. Total power dissipation is rated at 1.4 W. Operating temperatures span from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual-channel configuration integrating both N-channel and P-channel transistors within a single compact package.
• Enhanced switching performance characterized by low gate charge and optimized on-resistance values.
• Robust thermal management capabilities supporting high junction temperatures up to 150 °C.

FET, MOSFET Arrays Applications

• Synchronous rectification in DC-DC converter circuits
• Low-side and high-side switching in motor control applications
• Power management modules in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the XTMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require complementary N-P channel pairs. Evaluate thermal resistance parameters relative to the intended PCB copper area. Ensure gate drive voltages remain within the specified ±20 V limits to prevent oxide breakdown during operation.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon HEXFET family, which utilizes planar trench technology for power MOSFETs. The series emphasizes low on-resistance and fast switching speeds suitable for modern power conversion requirements. The specific model integrates two distinct transistor types to simplify circuit topology.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter margins before substituting with other dual MOSFET packages.