IRF7329TRPBF

FET, MOSFET Arrays Overview

The IRF7329TRPBF is a dual P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a -12V drain-source voltage rating and supports a continuous drain current of -9.2A at 25°C. The device utilizes trench technology to achieve an ultra-low on-resistance, with a maximum RDS(on) of 17mΩ at VGS = -4.5V. Packaged in a low-profile SO-8 format, it offers a power dissipation capacity of 2.0W at 25°C and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrating two independent MOSFETs into a single package for space-efficient circuit design.
• Advanced trench technology architecture engineered to minimize on-resistance per silicon area for improved efficiency.
• Low profile SO-8 package designed for vapor phase, infrared, or wave soldering techniques.

FET, MOSFET Arrays Applications

• Power management circuits requiring compact dual-switch solutions
• DC-DC converter topologies utilizing complementary switching elements
• Load switching applications in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the component origin carefully as Infineon acquired International Rectifier. Ensure the datasheet corresponds to the specific manufacturer marking. Confirm that the application environment remains within the specified thermal limits and voltage ratings defined in the official specifications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a small footprint. Evaluate the thermal resistance characteristics against the expected ambient conditions. Compare the gate charge parameters against the driving capability of the control logic to ensure adequate switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs known for ruggedized device designs. The SO-8 package variant includes a customized leadframe to enhance thermal characteristics and support multiple-die capabilities, distinguishing it from standard single-transistor packages.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements include the IRF7329PbF. Verify that any substitute maintains the -12V voltage rating and matches the SO-8 package dimensions for mechanical fit.

FET, MOSFET Arrays FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage is rated at ±8.0V.

Does the device include an integrated body diode?

Yes, the internal MOSFET structure includes an integral reverse p-n junction diode between the source and drain.

What is the typical total gate charge value?

The typical total gate charge (Qg) is 38nC under standard test conditions.