IRF7331

FET, MOSFET Arrays Overview

The IRF7331 is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 7.0 A at 25°C, reducing to 5.5 A at 70°C. The device offers an ultra-low on-resistance of 30 mΩ at VGS = 4.5V and 45 mΩ at VGS = 2.5V. Thermal performance includes a junction-to-ambient resistance of 62.5 °C/W and a junction temperature range of -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package
• Ultra-low on-resistance for high efficiency in battery management
• Customized leadframe for enhanced thermal dissipation
• Capable of multiple-die integration to reduce board space

FET, MOSFET Arrays Applications

• Battery management systems
• Load management applications
• Power distribution circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix (e.g., PbF) against the manufacturer's official documentation to confirm compliance with environmental standards such as RoHS. Confirm that the SO-8 package variant matches the required thermal and mechanical specifications for the intended application environment.

FET, MOSFET Arrays Selection Notes

Select this component when low on-resistance is critical for minimizing conduction losses in dual-channel designs. Ensure the gate drive voltage meets the threshold requirements for full enhancement. Evaluate the thermal derating curves to ensure the junction temperature remains within limits under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family from Infineon Technologies, originally developed by International Rectifier. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The SO-8 package is modified for improved thermal characteristics compared to standard variants.

FET, MOSFET Arrays Replacement Considerations

Consult the manufacturer's cross-reference search tool for verified substitutes. Do not assume functional equivalence based solely on pinout or voltage ratings without verifying electrical parameters and thermal characteristics.