IRF7331PBF

FET, MOSFET Arrays Overview

The IRF7331PBF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage of 20 V and a continuous drain current of 7 A at 25°C. The maximum on-resistance is 30 mΩ at VGS = 4.5V. Total gate charge is typically 13 nC, with Miller charge at 2.1 nC. Power dissipation reaches 2 W at 25°C. Thermal resistance junction-to-ambient is 62.5 °C/W. Gate-source voltage is ±12 V, and the operating temperature range spans -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient designs
• Ultra-low on-resistance per silicon area
• Customized leadframe for enhanced thermal characteristics
• Multiple-die capability within the SO-8 package

FET, MOSFET Arrays Applications

• Battery management systems
• Load management applications
• Power switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the component origin carefully as Infineon acquired International Rectifier. Confirm the datasheet version matches the manufacturing date code. Ensure the SO-8 package variant aligns with specific thermal requirements. Check for RoHS compliance status if required by local regulations. Validate pinout compatibility during PCB layout finalization.

FET, MOSFET Arrays Selection Notes

Select this part for low-voltage applications requiring high current density in compact footprints. Consider the 20 V rating for appropriate headroom. Evaluate thermal performance using the 62.5 °C/W junction-to-ambient resistance. Verify gate drive levels meet the 4.5 V threshold for optimal RDS(on). Assess pulse current limits against transient load profiles.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family from International Rectifier, now part of Infineon Technologies. It utilizes advanced processing techniques to minimize on-resistance. The SO-8 package supports vapor phase, infrared, or wave soldering. It serves as a discrete solution for efficient power handling in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct cross-references within the Infineon portfolio. Verify equivalent voltage and current ratings. Compare thermal resistance values for board space constraints. Ensure gate charge specifications match driver capabilities.