IRF7331TR

FET, MOSFET Arrays Overview

The IRF7331TR is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 7.0 A at 25°C, reducing to 5.5 A at 70°C. The device offers a maximum on-resistance of 30 mΩ at VGS = 4.5V and 45 mΩ at VGS = 2.5V. Total gate charge is typically 13 nC, with a gate-to-drain charge of 2.1 nC. Power dissipation is rated at 2.0 W at 25°C and 1.3 W at 70°C, with a thermal resistance junction-to-ambient of 62.5 °C/W. The junction temperature range spans from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single surface-mount package for space-efficient designs.
• Optimized leadframe structure providing enhanced thermal characteristics for improved heat dissipation.
• Low on-resistance per silicon area achieved through advanced processing techniques.
• Capable of vapor phase, infrared, or wave soldering processes.

FET, MOSFET Arrays Applications

• Battery management systems
• Load management applications
• Power supply circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'TR' indicates tape and reel packaging rather than tube. Confirm that the component meets RoHS compliance standards as specified by Infineon Technologies. Ensure the source documentation matches the exact part number to avoid discrepancies in electrical parameters or package dimensions.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual channel integration. Evaluate the thermal derating curve to ensure adequate heat sinking for continuous operation above 25°C ambient temperature. Consider the gate threshold voltage range when designing drive circuits to guarantee reliable switching performance under varying load conditions.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes specialized processing to minimize on-resistance while maintaining robust switching capabilities. The SO-8 package variant is designed for surface mount technology, facilitating automated assembly and compact board layouts.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout configurations and thermal resistance values to prevent redesign requirements.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the IRF7331TR?

The maximum pulsed drain current (IDM) is 28 A, limited by the maximum junction temperature.

Does the IRF7331TR include body diodes?

Yes, it contains integral reverse p-n junction diodes between the source and drain of each channel.

What is the typical reverse recovery time of the body diode?

The typical reverse recovery time (trr) is 31 ns at a junction temperature of 25°C.