FET, MOSFET Arrays IRF7335D1TR product image

IRF7335D1TR

  • Description:MOSFET 2N-CH 30V 10A 14SOIC
  • Series:FETKY™

SKU:0ea374fa62a3 Category: Brand:

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IRF7335D1TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 10A 14SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7335D1TR

  • Description:MOSFET 2N-CH 30V 10A 14SOIC
  • Series:FETKY™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10A
  • Rds On (Max) @ Id, Vgs:17.5mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1500pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:14-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7335D1TR

IRF7335D1TR

FET, MOSFET Arrays Overview

The IRF7335D1TR is a dual N-channel logic-level MOSFET array manufactured by Infineon Technologies. It features a 30V drain-source voltage rating and supports a continuous drain current of 10A at 25°C. The device utilizes a 14-SOIC surface-mount package with a maximum power dissipation of 2W. Key electrical characteristics include a maximum on-resistance of 17.5 milliohms at 10A and 4.5V gate drive, a threshold voltage of 1V at 250µA, and a maximum gate charge of 20nC at 4.5V. Input capacitance is specified at 1500pF at 15V.

FET, MOSFET Arrays Feature Summary

  • Dual non-symmetric N-channel configuration for independent control
  • Logic level gate drive capability for direct microcontroller interfacing
  • Surface-mount 14-SOIC packaging for automated assembly

FET, MOSFET Arrays Applications

  • Data processing systems
  • Power management circuits requiring low-voltage switching

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or the manufacturer's official channels. Confirm the part number suffix matches the tape-and-reel specification. Check for RoHS compliance status as indicated in official documentation, noting that this specific listing indicates non-compliance. Ensure storage conditions align with moisture sensitivity level requirements to prevent package damage before soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a 30V system. The logic-level gate drive simplifies interface design with standard logic voltages. Evaluate thermal performance based on the 2W power dissipation limit and the thermal resistance of the 14-SOIC package. Consider the asymmetric channel configuration if distinct switching characteristics are needed for each transistor pair.

FET, MOSFET Arrays Part Context

This device belongs to the FETKY™ series of discrete semiconductors. It is classified under MOSFET arrays, specifically designed for applications requiring multiple switching elements in a single package. The product is identified by the base number IRF733. Manufacturing is handled by Infineon Technologies, utilizing silicon-based MOSFET technology optimized for low on-resistance and fast switching speeds.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings before considering any alternative components from different manufacturers.

IRF7335D1TRIRF7335D1TR

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