IRF7338PBF

FET, MOSFET Arrays Overview

The IRF7338PBF is a dual N/P-channel HEXFET power MOSFET array manufactured by Infineon Technologies. It features a drain-source voltage of 12V and continuous drain currents of 6.3A for the N-channel and 3A for the P-channel at 25°C. The device exhibits a maximum on-resistance of 34 milliohms at 4.5V gate drive and 6A current. Key electrical characteristics include a gate charge of 8.6nC at 4.5V and an input capacitance of 640pF at 9V. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2W.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a single surface-mount package for space-efficient circuit design.
• Features logic-level gate threshold capability, enabling direct drive from standard digital logic interfaces.
• Utilizes advanced HEXFET technology to achieve low conduction losses and high switching efficiency.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Motor driver output stages
• Power management integrated circuits (PMIC) load switches

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to potential availability constraints. Confirm that the specific suffix matches the required lead-free and RoHS compliance standards. Review the official datasheet for any updates regarding end-of-life status or recommended replacement parts before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution for low-voltage bidirectional or half-bridge applications is required. Ensure the operating voltage remains below the 12V limit and that thermal management supports the 2W dissipation rating. Verify that the logic level compatibility meets the driving circuit requirements for optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, known for high reliability and robust performance in power switching applications. The IRF7338 series specifically targets low-voltage systems where size and efficiency are critical. It serves as a discrete alternative to integrated power modules in cost-sensitive designs.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is typically ±20V, though operation should remain within the specified logic levels for optimal performance.

Is this component suitable for automotive applications?

While Infineon offers automotive-grade MOSFETs, specific qualification for this part number requires verification against AEC-Q101 standards in the official documentation.