FET, MOSFET Arrays IRF7338TRPBF product image

IRF7338TRPBF

  • Description:MOSFET N/P-CH 12V 6.3A/3A 8SO
  • Series:HEXFET®

SKU:3e687d14c943 Category: Brand:

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IRF7338TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 12V 6.3A/3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7338TRPBF

  • Description:MOSFET N/P-CH 12V 6.3A/3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:6.3A, 3A
  • Rds On (Max) @ Id, Vgs:34mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:640pF @ 9V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7338TRPBF

IRF7338TRPBF

FET, MOSFET Arrays Overview

The IRF7338TRPBF is a dual-channel enhancement-mode MOSFET array from Infineon's HEXFET series, housed in an 8-SOIC surface-mount package. It integrates one N-channel and one P-channel transistor within a single isolated component. The device supports a drain-source voltage of 12V. Continuous drain current ratings are specified at 6.3A for the N-channel and 3A for the P-channel. Key electrical parameters include a maximum on-resistance of 34mΩ at 6A and 4.5V gate drive, with a typical gate charge of 8.6nC at 4.5V. The unit operates within a temperature range of -55°C to +150°C TJ and has a maximum power dissipation of 2W.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel transistors in a compact dual configuration
  • Features logic-level gate characteristics suitable for low-voltage control applications
  • Provides high switching efficiency through optimized on-resistance and low gate charge

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification stages
  • Low-side and high-side load switching circuits
  • Power management modules requiring compact dual-transistor solutions

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF indicates tape-and-reel packaging when sourcing. Confirm the component status as discontinued or not recommended for new designs (NRND) prior to finalizing procurement plans. Ensure compatibility with standard 8-SOIC footprint requirements during the ordering process.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring matched N/P channel pairs in a minimal footprint. Evaluate thermal performance against the 2W power dissipation limit under expected operating conditions. Consider the 12V voltage rating and current capabilities relative to the target load requirements.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. It utilizes silicon technology to deliver enhanced performance in surface-mount applications. The 8-SOIC package provides a balance between thermal management and space efficiency for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Public documentation confirms the IRF7338TRPBF is marked as Not Recommended for New Designs (NRND). No verified direct substitute part numbers are provided in the available source material.

IRF7338TRPBFIRF7338TRPBF

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