IRF7341GTRPBF

$1.92

Description：MOSFET 2N-CH 55V 5.1A 8SO
Series：HEXFET®

SKU:9e52f6f0e7aa Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF7341GTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 55V 5.1A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7341GTRPBF

Description：MOSFET 2N-CH 55V 5.1A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：55V
Current - Continuous Drain (Id) @ 25°C：5.1A
Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：780pF @ 25V
Power - Max：2.4W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7341GTRPBF

IRF7341GTRPBF

FET, MOSFET Arrays Overview

The IRF7341GTRPBF is a dual N-channel HEXFET Power MOSFET in an SO-8 surface-mount package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 5.1 A at 25°C. The device offers ultra-low on-resistance, specified as 0.050 Ω at VGS = 10V and 0.065 Ω at VGS = 4.5V. It supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 2.4 W at 25°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration within a single compact SO-8 package for space-efficient designs.
Advanced process technology enabling extremely low on-resistance per silicon area.
Operational capability up to a 175°C junction temperature for improved thermal performance.
Repetitive avalanche rating allowed up to the maximum junction temperature.

FET, MOSFET Arrays Applications

Power applications requiring efficient switching and high reliability
Designs needing reduced board space through dual MOSFET integration
Thermal management solutions utilizing 175°C operating ratings

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the TRPbF suffix to confirm tape and reel packaging containing 4000 units. Ensure compatibility with industrial qualification standards and JEDEC moisture sensitivity level 1 requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when dual isolated N-channel MOSFETs are required in a small footprint. Consider the 55V breakdown voltage and 5.1A current limits against circuit demands. Evaluate thermal resistance and derating curves for high-temperature environments exceeding standard 150°C ratings.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET series, utilizing advanced processing techniques for low on-resistance. The base model IRF7341GPbF is available in tube or bulk form, while the TRPbF suffix indicates the specific tape and reel packaging format for automated assembly.

FET, MOSFET Arrays Replacement Considerations

The IRF7341GPbF serves as the direct tube/bulk equivalent. Verify pinout and electrical specifications match if substituting with other dual N-channel SO-8 MOSFETs.