IRF7343TR

FET, MOSFET Arrays Overview

The UMW IRF7343TR is a dual N-channel and P-channel enhancement mode MOSFET in an SOP-8 package. It features ultra-low on-resistance, with the N-channel Rds(on) at 50 mΩ (Vgs=10V) and 65 mΩ (Vgs=4.5V), while the P-channel Rds(on) is 90 mΩ (Vgs=-10V) and 100 mΩ (Vgs=-4.5V). The device supports continuous drain currents of 4.7A for N-channel and -3.4A for P-channel. It has a breakdown voltage of 55V/-55V, a maximum power dissipation of 2W, and operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N and P channel configuration in a single surface mount package
• Ultra-low on-resistance optimized for efficient power switching
• Enhanced thermal characteristics through customized leadframe design
• Fully avalanche rated for ruggedized operation

FET, MOSFET Arrays Applications

• Power management circuits requiring compact dual-channel solutions
• Synchronous rectification applications
• Motor control systems utilizing low-voltage MOSFETs

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking and lot code against official UTD Semiconductor documentation upon receipt. Confirm the SOP-8 package dimensions match the provided mechanical drawing. Ensure storage conditions comply with moisture sensitivity level requirements before soldering to prevent package damage during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-channel solution is required for low-voltage power switching. The SOP-8 package offers space savings compared to discrete components. Verify that the 55V rating and 2W power dissipation meet the specific circuit load and thermal management requirements of the target application.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, known for advanced processing techniques that achieve low on-resistance per silicon area. The IRF7343 variant specifically integrates both N-channel and P-channel devices into one package, facilitating simplified board layout for complementary switching topologies.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility and electrical parameters against original designs. Verify that any substitute maintains the same SOP-8 footprint and meets or exceeds the 55V breakdown voltage and current ratings.