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IRF7350TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 100V 2.1A/1.5A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7350TRPBF
- Description：MOSFET N/P-CH 100V 2.1A/1.5A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：2.1A, 1.5A
- Rds On (Max) @ Id, Vgs：210mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：380pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7350TRPBF
FET, MOSFET Arrays Overview
The IRF7350TRPBF is a dual N-channel and P-channel HEXFET power MOSFET in an SO-8 package. It features a drain-to-source voltage of 100V for the N-channel and -100V for the P-channel. The maximum continuous drain current is 2.1A at 25°C for the N-channel and -1.5A for the P-channel. Static on-resistance is 0.21Ω for the N-channel and 0.48Ω for the P-channel, measured at VGS = 10V and -10V respectively. Power dissipation is 2.0W at 25°C ambient temperature.
FET, MOSFET Arrays Feature Summary
- Dual N-channel and P-channel configuration within a single surface-mount package
- Advanced processing techniques achieve low on-resistance per silicon area
- Customized leadframe design provides enhanced thermal characteristics
- Ruggedized device design supports high switching speed and reliability
FET, MOSFET Arrays Applications
- DC motor drives
- Load management applications
- Power circuits requiring compact board space solutions
FET, MOSFET Arrays Procurement Notes
Verify the component matches the International Rectifier (Infineon) HEXFET specification sheet PD-95367. Confirm the SO-8 package type and lead-free construction align with project requirements. Ensure the ordering suffix corresponds to tape and reel packaging if automated assembly is utilized. Cross-reference the manufacturer part number against official distributor catalogs to validate authenticity.
FET, MOSFET Arrays Selection Notes
Select this component when a matched N-channel and P-channel pair is required in a minimal footprint. The dual-die capability allows for reduced board space compared to discrete components. Evaluate thermal performance based on the junction-to-ambient resistance values provided in the datasheet. Ensure gate drive voltages are sufficient to fully enhance the channels for optimal conduction.
FET, MOSFET Arrays Part Context
This device belongs to the HEXFET family of power MOSFETs manufactured by International Rectifier, now part of Infineon Technologies. The series utilizes advanced processing to minimize on-resistance while maintaining ruggedness. The SO-8 package variant offers a balance between power handling and surface mount convenience for industrial and consumer electronics.
FET, MOSFET Arrays Replacement Considerations
Consult official replacement lists from Infineon or authorized distributors for verified equivalents. Do not substitute without confirming pinout compatibility and electrical parameter alignment.
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