IRF7351TR

FET, MOSFET Arrays Overview

The IRF7351TR is a dual N-channel HEXFET power MOSFET manufactured by UMW in an SOP-8 surface-mount package. It features a 60V drain-to-source voltage rating and an 8A continuous drain current at 25°C ambient temperature. The device exhibits a maximum on-resistance of 23 mΩ at VGS = 10V, with a gate threshold voltage ranging from 2V to 4V. Key electrical characteristics include a total gate charge of 36 nC maximum and a junction-to-ambient thermal resistance of 62.5 °C/W. The component supports a maximum operating junction temperature of 150°C and includes fully characterized avalanche voltage and current capabilities.

FET, MOSFET Arrays Feature Summary

• Ultra-low gate impedance for efficient switching performance
• Fully characterized avalanche voltage and current ratings
• Synchronous rectifier design optimized for isolated DC-DC converters

FET, MOSFET Arrays Applications

• Synchronous rectification in isolated DC-DC converters
• Low power motor drive systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking matches UMW specifications when sourcing this component. Confirm the package type is SOP-8 and the ordering code corresponds to the tape and reel delivery mode. Ensure the part meets the required voltage and current ratings for the specific circuit application before integration.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual N-channel configuration in a compact SOP-8 footprint. Consider the 60V breakdown voltage and 8A current capacity for low-power motor drives or isolated converter secondary sides. Evaluate the 23 mΩ on-resistance and 36 nC gate charge against switching frequency and efficiency requirements.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs designed for high-efficiency power management. The IRF7351 variant specifically targets synchronous rectification needs where low gate impedance and robust avalanche handling are critical. It serves as a discrete solution for replacing integrated power stages in space-constrained designs.

FET, MOSFET Arrays Replacement Considerations

Check datasheets for alternative dual N-channel MOSFETs with similar 60V/8A ratings and SOP-8 packaging. Verify that replacement parts match the 23 mΩ RDS(on) and 36 nC Qg specifications to ensure circuit compatibility.