IRF7379

FET, MOSFET Arrays Overview

The IRF7379 is a dual N- and P-channel HEXFET power MOSFET in an SO-8 package. It features a 30V drain-source voltage rating with continuous drain currents of 5.8A for the N-channel and -4.3A for the P-channel at 25°C. The device offers ultra-low on-resistance, specified at 0.045Ω maximum for the N-channel and 0.090Ω maximum for the P-channel at VGS=10V. Total gate charge is typically 25nC. Operating junction temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Complimentary half-bridge configuration enables efficient synchronous rectification and switching applications.
• Advanced fifth-generation processing achieves extremely low on-resistance per silicon area.
• Fully avalanche rated design ensures ruggedized performance under transient conditions.

FET, MOSFET Arrays Applications

• Synchronous rectification in DC/DC converters
• Power management circuits requiring complementary switching
• Low voltage motor control applications

FET, MOSFET Arrays Procurement Notes

Verify current availability status as this component may be subject to obsolescence or discontinuation by the manufacturer. Confirm that the specific ordering suffix matches the required lead-free specifications. Ensure the source document corresponds to the exact part number variant intended for integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a matched N/P pair within a single surface-mount package to minimize board space. Evaluate thermal derating requirements based on the 2.5W power dissipation limit and 50°C/W thermal resistance. Verify that the 30V breakdown voltage provides sufficient margin for the target operating voltage.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family utilizing fifth-generation technology. Originally manufactured by International Rectifier, the product line was acquired by Infineon Technologies. The SO-8 package includes a customized leadframe designed for enhanced thermal characteristics and compatibility with vapor phase, infrared, or wave soldering techniques.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Potential alternatives include the IRF7389 or IRF7319, though electrical parameters such as current ratings and on-resistance differ significantly. Verify pinout compatibility and thermal performance before substitution.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-channel?

The maximum continuous drain current for the N-channel is 5.8A at an ambient temperature of 25°C.

Is the device fully avalanche rated?

Yes, the datasheet specifies that the device is fully avalanche rated.

What is the typical total gate charge?

The typical total gate charge (Qg) is 25nC.