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IRF7380PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 80V 3.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7380PBF
- Description：MOSFET 2N-CH 80V 3.6A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：73mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 25V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7380PBF
FET, MOSFET Arrays Overview
The IRF7380PbF is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-to-source voltage of 80 V and a continuous drain current of 3.6 A at 25°C. The maximum on-resistance is 73 mΩ at VGS = 10V. Total gate charge is typically 15 nC, with Miller charge at 4.5 nC. Maximum power dissipation is 2 W at 25°C, and the junction temperature range extends to 150°C.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a single SO-8 package
- Low gate-to-drain charge for reduced switching losses
- Fully characterized capacitance including effective output capacitance
- Fully characterized avalanche voltage and current ratings
FET, MOSFET Arrays Applications
- High frequency DC-DC converters
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix against Infineon's official documentation to confirm lead-free status and specific packaging variations. Ensure the component meets RoHS standards as indicated in the datasheet. Confirm that the SO-8 package dimensions align with your PCB footprint requirements before finalizing procurement.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring high-frequency switching due to its low gate charge characteristics. The dual N-channel design simplifies driver circuitry by integrating two channels. Consider the thermal resistance and power dissipation limits when designing heat management solutions for continuous operation.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced silicon technology to achieve low on-resistance and fast switching speeds. The SO-8 package provides a compact solution for surface-mount applications, balancing performance with space efficiency in modern electronic designs.
FET, MOSFET Arrays Replacement Considerations
IRF7380TRPBF
FET, MOSFET Arrays FAQ
What is the typical total gate charge?
The typical total gate charge is 15 nC.
Is the device lead-free?
Yes, the IRF7380PbF is a lead-free product.
What is the maximum junction temperature?
The maximum operating junction temperature is 150°C.
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