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IRF7380QTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 80V 3.6A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7380QTRPBF
- Description：MOSFET 2N-CH 80V 3.6A 8SO
- Series：-
- Mfr：Infineon Technologies
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：73mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 25V
- Power - Max：2W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7380QTRPBF
FET, MOSFET Arrays Overview
The IRF7380QTRPBF is a HEXFET power MOSFET in an SO-8 package. It features dual N-channel configuration with a drain-to-source voltage of 80V and a maximum continuous drain current of 3.6A at 25°C. The device has a maximum on-resistance of 73mΩ at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and includes an integral body diode.
FET, MOSFET Arrays Feature Summary
- Dual N-channel architecture for compact circuit integration
- Enhanced thermal performance via exposed pad design
- Integrated body diode with fast recovery characteristics
FET, MOSFET Arrays Applications
- DC-DC converter circuits
- Motor control applications
- Power management systems
FET, MOSFET Arrays Procurement Notes
Verify the component against official Infineon documentation to confirm specifications and authenticity. Check for End-of-Life notices, as indicated by notice #529. Ensure compatibility with required automotive or industrial qualification standards before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring high-voltage handling and efficient thermal dissipation in small footprints. Evaluate the gate charge and threshold voltage requirements against the driving circuit capabilities to ensure optimal switching performance.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance and robust avalanche capability within the standard SO-8 surface-mount package.
FET, MOSFET Arrays Replacement Considerations
Consult the manufacturer's replacement guide for obsolete parts. Verify pinout compatibility and electrical parameter equivalence before substituting with alternative components.
FET, MOSFET Arrays FAQ
What is the maximum junction temperature?
The maximum operating junction temperature is +150°C.
Is the device suitable for synchronous rectification?
Yes, the low on-resistance and fast body diode make it suitable for synchronous rectification applications.
What is the package type?
The component is housed in an SO-8 package with an exposed pad for thermal management.
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