IRF7389TRPBF

FET, MOSFET Arrays Overview

The IRF7389TRPBF is a dual HEXFET power MOSFET from Infineon Technologies, integrating one N-channel and one P-channel enhancement-mode transistor in a single SOIC-8 surface-mount package. It features a 30V drain-source voltage rating with continuous drain currents of 5.3A for the N-channel and 7.3A for the P-channel. The device offers low on-resistance values of 46 milliohms for both channels, ensuring efficient power switching. Operating within a temperature range of -55°C to +150°C, it provides robust thermal performance with a power dissipation capacity of 2.5W.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel transistors into a single compact package for simplified circuit design.
• Features low on-resistance characteristics to minimize conduction losses and improve overall system efficiency.
• Supports high-temperature operation up to 150°C, suitable for demanding industrial and consumer environments.

FET, MOSFET Arrays Applications

• DC/DC converter circuits requiring synchronous rectification
• Power management modules for portable electronic devices
• Load switching applications in battery-powered systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging configuration. Confirm that the component meets RoHS directives and other relevant regulatory standards required for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints necessitate a dual-transistor solution in an SOIC-8 footprint. Ensure the application voltage remains below the 30V breakdown limit and current demands do not exceed the specified continuous ratings. Consider the thermal resistance of the PCB layout to maintain junction temperatures within the safe operating area during peak load conditions.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon HEXFET family, known for high-performance silicon MOSFET technology. The IRF7389 variant specifically targets applications requiring integrated complementary switching capabilities. It serves as a standard discrete solution for low-voltage power management tasks where board real estate is limited but efficient switching is critical.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Potential replacements may include other HEXFET dual MOSFETs with compatible pinouts and electrical specifications. Verify that any substitute maintains equivalent voltage ratings, current handling capabilities, and package dimensions to ensure seamless integration without redesigning the host circuit board.