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IRF7530TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.4A MICRO8. Review the specifications below when checking this part for your BOM.
The IRF7530TRPBF is a dual N-channel enhancement mode MOSFET from Infineon Technologies, part of the HEXFET series. It utilizes Micro 8 packaging (MO-187) for surface mount installation. The device features a drain-source voltage rating of 20 V and a continuous drain current of 5.4 A at 25°C. Key electrical parameters include a maximum on-resistance of 30 mΩ at 4.5 V gate drive, typical gate charge of 18 nC, and typical gate-drain charge of 3.4 nC. Thermal performance specifies a junction temperature range up to 150°C and a thermal resistance from junction to ambient of 100 K/W.
Verify the specific suffix TRPBF against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the Micro 8 footprint requirements for your PCB layout. Cross-reference the datasheet version to confirm technical specifications remain unchanged.
Select this component when a dual N-channel solution is required in a small form factor. The 20 V rating suits low-voltage applications. Evaluate the 30 mΩ on-resistance against thermal constraints, as the 100 K/W thermal resistance limits high-power dissipation scenarios without adequate board cooling.
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It is designed for general-purpose switching applications requiring dual channels in a single package. The Micro 8 package provides a balance between thermal performance and space efficiency for consumer and industrial electronics.
Consult Infineon's cross-reference tools for verified substitutes. Ensure any replacement maintains the 20 V rating, dual N-channel topology, and compatible Micro 8 pinout to avoid redesign efforts.
The maximum operating junction temperature is 150°C.
According to available data, this component does not meet automotive standards.
The typical gate charge is 18 nC at 4.5 V.
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