FET, MOSFET Arrays IRF7530TRPBF product image

IRF7530TRPBF

$0.94
  • Description:MOSFET 2N-CH 20V 5.4A MICRO8
  • Series:HEXFET®

SKU:7b9e1c060745 Category: Brand:

  
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IRF7530TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 5.4A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7530TRPBF

  • Description:MOSFET 2N-CH 20V 5.4A MICRO8
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.4A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1310pF @ 15V
  • Power - Max:1.3W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:Micro8™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7530TRPBF

IRF7530TRPBF

FET, MOSFET Arrays Overview

The IRF7530TRPBF is a dual N-channel enhancement mode MOSFET from Infineon Technologies, part of the HEXFET series. It utilizes Micro 8 packaging (MO-187) for surface mount installation. The device features a drain-source voltage rating of 20 V and a continuous drain current of 5.4 A at 25°C. Key electrical parameters include a maximum on-resistance of 30 mΩ at 4.5 V gate drive, typical gate charge of 18 nC, and typical gate-drain charge of 3.4 nC. Thermal performance specifies a junction temperature range up to 150°C and a thermal resistance from junction to ambient of 100 K/W.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration in a compact Micro 8 package
  • Low on-resistance optimized for efficient power switching
  • Fast switching characteristics with low gate charge

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Power management modules
  • Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TRPBF against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the Micro 8 footprint requirements for your PCB layout. Cross-reference the datasheet version to confirm technical specifications remain unchanged.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in a small form factor. The 20 V rating suits low-voltage applications. Evaluate the 30 mΩ on-resistance against thermal constraints, as the 100 K/W thermal resistance limits high-power dissipation scenarios without adequate board cooling.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It is designed for general-purpose switching applications requiring dual channels in a single package. The Micro 8 package provides a balance between thermal performance and space efficiency for consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult Infineon's cross-reference tools for verified substitutes. Ensure any replacement maintains the 20 V rating, dual N-channel topology, and compatible Micro 8 pinout to avoid redesign efforts.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

Does this component support automotive standards?

According to available data, this component does not meet automotive standards.

What is the typical gate charge value?

The typical gate charge is 18 nC at 4.5 V.

IRF7530TRPBFIRF7530TRPBF
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