FET, MOSFET Arrays IRF7555TRPBF product image

IRF7555TRPBF

  • Description:MOSFET 2P-CH 20V 4.3A MICRO8
  • Series:HEXFET®

SKU:3b382ab56206 Category: Brand:

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IRF7555TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 4.3A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7555TRPBF

  • Description:MOSFET 2P-CH 20V 4.3A MICRO8
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.3A
  • Rds On (Max) @ Id, Vgs:55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1066pF @ 10V
  • Power - Max:1.25W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package:Micro8™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7555TRPBF

IRF7555TRPBF

FET, MOSFET Arrays Overview

The IRF7555TRPBF is a dual P-channel MOSFET array from the HEXFET series, manufactured by Infineon Technologies. It features a 20V drain-source voltage rating and supports a continuous drain current of 4.3A at 25°C. The device utilizes Micro8 surface-mount packaging with an 8-TSSOP/MSOP footprint. Key electrical characteristics include a maximum on-resistance of 55 milliohms at 4.5V gate drive and a typical gate charge of 15nC at 5V. It operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a single package for space-efficient circuit design
  • Logic-level gate operation enabling direct interface with standard logic outputs
  • HEXFET technology providing optimized performance for power switching applications

FET, MOSFET Arrays Applications

  • Low-side load switching in portable electronic devices
  • Power management circuits requiring compact dual-channel solutions
  • Battery protection and control systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or official Infineon channels. Confirm RoHS compliance status via the manufacturer's datasheet. Check for end-of-life notifications as this part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before soldering.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a Micro8 package. Consider the 55 milliohm on-resistance for low-loss switching at 4.5V gate drive. Evaluate thermal dissipation capabilities given the 1.25W power rating. Compare against single-channel alternatives if pin count reduction is not critical.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's HEXFET family, known for high-performance silicon MOSFETs. The Micro8 package offers a small footprint suitable for dense PCB layouts. As a dual P-channel array, it simplifies bill of materials compared to using two discrete components.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements within the IRF75xx series. Verify pin compatibility and electrical parameters such as Vds, Id, and Rds(on). Consult Infineon documentation for recommended substitute part numbers.

IRF7555TRPBFIRF7555TRPBF

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