FET, MOSFET Arrays IRF7750TR product image

IRF7750TR

$1.44
  • Description:MOSFET 2P-CH 20V 4.7A 8TSSOP
  • Series:HEXFET®

SKU:2079b81f26d7 Category: Brand:

  
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IRF7750TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 20V 4.7A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7750TR

  • Description:MOSFET 2P-CH 20V 4.7A 8TSSOP
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.7A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF7750TR

IRF7750TR

FET, MOSFET Arrays Overview

The IRF7750TR is a dual P-channel MOSFET from Infineon Technologies, housed in an 8-TSSOP surface-mount package. It features a drain-source voltage of 20V and a continuous drain current of 4.7A at 25°C. The device exhibits a maximum on-resistance of 30 milliohms at Vgs = -4.5V. Gate threshold voltage is specified at 1.2V, with a gate charge of 26nC. Operating temperatures range from -55°C to +150°C junction temperature, with a maximum power dissipation of 1.3W.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration for efficient half-bridge or synchronous rectification applications
  • Low on-resistance optimized for high-current switching performance
  • Logic-level gate drive compatibility for direct interface with standard logic controllers

FET, MOSFET Arrays Applications

  • DC motor control circuits
  • Power management modules
  • Synchronous rectification in low-voltage converters

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance and packaging specifications match design requirements. Check for obsolescence notices and plan for long-term supply continuity. Validate datasheet revisions against production batches.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage dual P-channel switching needs requiring compact SMD packaging. Ensure thermal management supports 1.3W dissipation within the operating temperature range. Verify gate drive voltage levels align with the 1.2V threshold specification for reliable switching.

FET, MOSFET Arrays Part Context

Part of Infineon's HEXFET family, designed for general-purpose power switching. The IRF7750 series offers integrated dual channels in a single package to reduce board space. Manufactured using silicon technology for robust performance in industrial and consumer electronics.

FET, MOSFET Arrays Replacement Considerations

IRF7750GTRPBF serves as a verified leaded replacement variant within the same series. Both components share identical electrical characteristics and pinout configurations. Verify package compatibility during transition.

IRF7750TRIRF7750TR
$1.44
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