ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRF7751 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 4.5A 8TSSOP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7751
- Description：MOSFET 2P-CH 30V 4.5A 8TSSOP
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：35mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1464pF @ 25V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7751
FET, MOSFET Arrays Overview
The IRF7751 is a dual P-channel MOSFET array manufactured by Infineon Technologies, utilizing silicon technology. It features an 8-TSSOP surface-mount package and operates with a drain-source breakdown voltage of 30V and a continuous drain current of 4.5A at 25°C. The device has a power dissipation rating of 1W and functions within a temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration for space-efficient circuit design
- Surface-mount TSSOP-8 packaging for automated assembly
FET, MOSFET Arrays Applications
- Low-voltage power management circuits
- Battery protection modules
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as some sources indicate non-compliance. Ensure the specific lot date code aligns with project requirements. Request official datasheets and test reports to validate electrical parameters before integration into final designs.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring dual P-channel control in compact spaces. Evaluate thermal performance given the 1W power dissipation limit. Compare against single-channel alternatives if higher current capacity is needed. Consider the 30V rating for compatibility with standard low-voltage systems.
FET, MOSFET Arrays Part Context
This part belongs to Infineon's discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a complementary solution for N-channel devices in bridge configurations. The TSSOP-8 form factor supports high-density PCB layouts common in modern consumer electronics and industrial controllers.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications carefully when considering alternative manufacturers' components to ensure functional compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
