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IRF7807ATRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 8.3A 8SO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF7807ATRPBF
- Description：MOSFET N-CH 30V 8.3A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for IRF7807ATRPBF
Single FETs, MOSFETs Overview
The IRF7807ATRPBF is a single N-channel HEXFET power MOSFET in an SO-8 surface-mount package. It features a drain-source voltage of 30 V and a continuous drain current of 8.3 A at 25°C. The maximum on-resistance is 25 mΩ at VGS = 4.5 V, with a total gate charge of 17 nC. Power dissipation is rated at 2.5 W at 25°C, and the junction temperature range spans from -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Advanced HEXFET technology balances low conduction losses and switching losses for high efficiency.
- Optimized for mobile DC-DC converters powering microprocessors.
- Suitable as both control FET and synchronous FET in system voltages like 3.3V and 5V.
Single FETs, MOSFETs Applications
- Mobile PC DC-DC converters
- High-efficiency DC-DC converters
- Microprocessor power supplies
Single FETs, MOSFETs Procurement Notes
Verify the component status before procurement, as this specific part number may be obsolete or discontinued. Confirm that the final ordering suffix matches the required tape and reel packaging format. Ensure the manufacturer designation aligns with Infineon Technologies or its predecessor International Rectifier specifications.
Single FETs, MOSFETs Selection Notes
Select this device for applications requiring a balance between low Rds(on) and minimal gate charge. It is specifically designed for cost-effective solutions in 3.3V and 5V systems where the same MOSFET can serve as both the control and synchronous switch. Evaluate thermal resistance requirements based on the 50 K/W junction-to-ambient rating.
Single FETs, MOSFETs Part Context
This component belongs to the HEXFET family of power MOSFETs. It is manufactured by Infineon Technologies, formerly International Rectifier. The device utilizes silicon technology and is housed in an 8-pin SOIC (SO-8) package. It is classified as a discrete semiconductor product within the transistor category.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative components through independent electrical parameter comparison if substitution is necessary.
Single FETs, MOSFETs FAQ
Can the IRF7807ATRPBF be used as both the control FET and the synchronous FET?
Yes, the datasheet indicates that the same MOSFET can be used for both the control FET (Q1) and the synchronous FET (Q2) in 3.3V and 5V converter applications.
What is the significance of Qgs2 and Qoss in this device?
Minimizing Qgs2 reduces switching losses in the control FET, while Qoss represents the charge supplied to the output capacitance during each switching cycle, impacting overall efficiency and heat dissipation.
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