IRF7904PBF

Description：MOSFET 2N-CH 30V 7.6A/11A 8SO
Series：HEXFET®

SKU:0f5333a7da6a Category: FET, MOSFET Arrays Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF7904PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 7.6A/11A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF7904PBF

Description：MOSFET 2N-CH 30V 7.6A/11A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.6A, 11A
Rds On (Max) @ Id, Vgs：16.2mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id：2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：910pF @ 15V
Power - Max：1.4W, 2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF7904PBF

IRF7904PBF

FET, MOSFET Arrays Overview

The IRF7904PbF is a dual P-Channel Power MOSFET in an SO-8 package. Q1 (Control FET) features a 30V drain-source voltage, 7.6A continuous current, and 16.2mΩ on-resistance at 10V VGS. Q2 (Synchronous FET) offers 11A current and 10.8mΩ resistance. The device includes fully characterized avalanche capabilities, low gate charge, and improved body diode reverse recovery.

FET, MOSFET Arrays Feature Summary

Dual P-Channel configuration for synchronous rectification
Low on-resistance optimized for 4.5V gate drive
Fully characterized avalanche voltage and current ratings
Improved body diode reverse recovery performance

FET, MOSFET Arrays Applications

Point-of-load converters in notebook computers
Server power supplies
Graphics card power management
Game console power circuits
Set-top box power regulation

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to confirm package type and tape/reel specifications. Confirm RoHS compliance status and lead-free manufacturing details directly with the manufacturer or authorized distributors before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a matched dual P-channel pair in a compact surface-mount footprint. Ensure the design accounts for the specific thermal derating curves provided for both control and synchronous channels under varying ambient temperatures.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is designed for high-efficiency switching applications where space constraints and thermal performance are critical factors in system design.