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IRF7904TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 7.6A/11A 8SO. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF7904TRPBF
- Description：MOSFET 2N-CH 30V 7.6A/11A 8SO
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.6A, 11A
- Rds On (Max) @ Id, Vgs：16.2mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：910pF @ 15V
- Power - Max：1.4W, 2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF7904TRPBF
FET, MOSFET Arrays Overview
The IRF7904TRPBF is a dual N-channel power MOSFET in an SO-8 package. It features two independent channels: Q1 (Control FET) with a maximum drain current of 7.6 A and on-resistance of 16.2 mΩ, and Q2 (Synchronous FET) with a maximum drain current of 11 A and on-resistance of 10.8 mΩ. Both channels support a 30 V drain-to-source voltage and a ±20 V gate-to-source voltage. The device operates within a junction temperature range of -55 °C to +150 °C.
FET, MOSFET Arrays Feature Summary
- Dual configuration optimized for synchronous rectification applications
- Low static drain-to-source on-resistance at 4.5 V gate drive
- Fully characterized avalanche voltage and current ratings
- Improved body diode reverse recovery characteristics
FET, MOSFET Arrays Applications
- Point-of-load converters in notebook computers
- Server power supply circuits
- Graphics card power management
- Game console power regulation
- Set-top box power conversion
FET, MOSFET Arrays Procurement Notes
Verify the component datasheet against the manufacturer's official documentation to confirm electrical parameters and pinout compatibility. Ensure that the specific ordering suffix matches the required packaging format. Confirm RoHS compliance status and check for any obsolescence notices or lifecycle changes before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring a compact dual-N-channel solution with low on-resistance. Evaluate thermal performance based on the specified junction-to-ambient resistance values. Consider the distinct current capabilities of the control and synchronous channels when designing the power stage. Verify gate charge requirements against the driver circuit capabilities.
FET, MOSFET Arrays Part Context
This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SO-8 package. The device is designed for consumer market applications and meets lead-free manufacturing standards.
FET, MOSFET Arrays Replacement Considerations
Consult the manufacturer's cross-reference tools for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFET packages without verifying pinout and electrical specifications.
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