IRF7905TRPBF

FET, MOSFET Arrays Overview

The IRF7905TRPBF is a dual N-channel power MOSFET in an SO-8 package. It features a 30V drain-to-source voltage rating and maximum continuous drain currents of 7.8A for Q1 and 8.9A for Q2 at 25°C. The device exhibits low on-resistance, with maximum values of 21.8mΩ for Q1 and 17.1mΩ at VGS=10V. Gate charge is typically 6.9nC for Q1 and 4.6nC for Q2 at VGS=4.5V. Thermal resistance from junction to ambient is 62.5°C/W, and the maximum operating junction temperature is 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for synchronous rectification
• Low gate charge characteristics for reduced switching losses
• Fully characterized avalanche voltage and current capabilities
• Improved body diode reverse recovery performance

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in notebook computers
• Server power supply circuits
• Graphics card voltage regulation modules
• Game console power management systems
• Set-top box DC-DC conversion stages

FET, MOSFET Arrays Procurement Notes

Verify that the ordering suffix TRPBF corresponds to tape and reel packaging rather than tube packaging. Confirm the component meets lead-free manufacturing standards as specified in the datasheet. Ensure the supplier provides documentation confirming the HEXFET technology generation and compliance with consumer market qualification standards.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact dual MOSFET solution with low thermal impedance. The specific RDS(on) ratings at VGS=10V are critical for control and synchronous FET roles. Evaluate the gate charge requirements against the driver capability to ensure efficient switching at the target frequency.

FET, MOSFET Arrays Part Context

This part belongs to the Infineon HEXFET family, utilizing advanced planar trench technology. It is designed specifically for consumer electronics where space constraints and efficiency are paramount. The dual configuration allows for integrated high-side and low-side switching within a single footprint.

FET, MOSFET Arrays Replacement Considerations

IRF7905PBF: Identical electrical specifications but supplied in tube packaging instead of tape and reel.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in this dual MOSFET?

Q1 serves as the control FET with a maximum continuous drain current of 7.8A, while Q2 acts as the synchronous FET with a higher rating of 8.9A.

Is the IRF7905TRPBF suitable for automotive applications?

No, the datasheet explicitly states the product is designed and qualified for the consumer market only.

What is the maximum gate-to-source voltage rating?

The absolute maximum gate-to-source voltage is ±20V.