IRF8010STRLPBF

Single FETs, MOSFETs Overview

The IRF8010STRLPBF is a lead-free HEXFET Power MOSFET in a TO-262 package. It features a 100V drain-to-source breakdown voltage and a maximum on-resistance of 15mΩ at VGS=10V. The device supports a continuous drain current of 80A at 25°C case temperature. Key dynamic parameters include a total gate charge of 81nC typical and an effective output capacitance of 530pF. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Low gate-to-drain charge designed to reduce switching losses
• Fully characterized capacitance including effective COSS for simplified design
• Fully characterized avalanche voltage and current capabilities
• Lead-free construction compliant with environmental standards

Single FETs, MOSFETs Applications

• High frequency DC-DC converters
• Uninterruptible Power Supply (UPS) systems
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'STR' indicates tape-and-reel packaging, as the primary datasheet references the 'S' and 'L' variants. Confirm the 'LPbF' designation aligns with lead-free requirements. Ensure the ordering code matches the exact pinout and thermal characteristics defined for the TO-262 package. Cross-reference the manufacturer's latest documentation for any updates to absolute maximum ratings or thermal resistance values before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses due to its 15mΩ maximum RDS(on). The fully characterized avalanche energy makes it suitable for inductive load switching where transient overvoltages may occur. Consider the 80A continuous current rating against your thermal management strategy, as performance degrades significantly above 25°C case temperature. The low gate charge supports high-frequency operation in switch-mode power supplies.

Single FETs, MOSFETs Part Context

This part belongs to the IRF8010 series of N-channel HEXFET Power MOSFETs from Infineon Technologies. The series includes variants such as IRF8010SPbF and IRF8010LPbF, sharing identical electrical characteristics but differing in packaging or reel configuration. These devices are engineered for industrial market applications, emphasizing reliability and robust performance under high-current conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 100V, ~15mΩ TO-262 MOSFETs with comparable gate charge and avalanche ratings. Verify that any replacement maintains the same pinout configuration and thermal resistance specifications. Ensure the alternative device meets the required 80A continuous current capability at the intended operating temperature.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy?

The datasheet lists Avalanche Characteristics but does not provide a specific numerical value for Single Pulse Avalanche Energy (EAS) in the static/dynamic tables; it refers to Figure 12c for graphical data.

How does the on-resistance change with temperature?

The normalized on-resistance increases with junction temperature. Figure 4 shows the ratio of RDS(on) at various temperatures relative to 25°C, indicating higher resistance at elevated temperatures up to 175°C.

What is the reverse recovery time of the body diode?

The maximum reverse recovery time (trr) is 150ns when tested at TJ=150°C, IF=80A, VDD=50V, and di/dt=100A/µs.