IRF8313PBF

Description：MOSFET 2N-CH 30V 9.7A 8SO
Series：-

SKU:42d6a7d0a427 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF8313PBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 30V 9.7A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF8313PBF

Description：MOSFET 2N-CH 30V 9.7A 8SO
Series：-
Mfr：Infineon Technologies
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9.7A
Rds On (Max) @ Id, Vgs：15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id：2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：90nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：760pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF8313PBF

IRF8313PBF

FET, MOSFET Arrays Overview

The IRF8313PbF is a single N-channel HEXFET Power MOSFET housed in an SO-8 package. It features a drain-to-source voltage (VDS) of 30V and a continuous drain current (ID) of 9.7A at 25°C, dropping to 8.1A at 70°C. The maximum on-resistance (RDS(on)) is 15.5mΩ at VGS=10V and 21.6mΩ at VGS=4.5V. Total gate charge (Qg) is typically 6.0nC. Thermal resistance junction-to-ambient (RθJA) is 62.5°C/W, with a maximum power dissipation of 1.3W at 25°C.

FET, MOSFET Arrays Feature Summary

Optimized for synchronous buck operation to minimize conduction and switching losses
Fully characterized avalanche voltage and current ratings
Lead-free construction qualified to 260°C reflow temperatures

FET, MOSFET Arrays Applications

Load Switch
DC/DC Conversion
High efficiency DC-DC converters for notebook processors

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact Infineon Technologies part number IRF8313PbF. Confirm the package type is SO-8 and that it meets RoHS compliance standards. Check datasheet specifications against application requirements for voltage, current, and thermal limits before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage, high-efficiency power conversion designs requiring small surface-mount footprints. Ensure the operating temperature range stays within -55°C to +175°C. Verify that the gate drive voltage supports the specified RDS(on) performance levels for optimal efficiency.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET Power MOSFET family from Infineon Technologies. It utilizes advanced silicon technology integrated into the industry-standard SO-8 package. The series is designed to address thermal and electrical challenges in modern portable electronics and processor power delivery systems.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to fit existing board layouts without modification.