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IRF840STRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 8A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF840STRLPBF
- Description：MOSFET N-CH 500V 8A D2PAK
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF840STRLPBF
Single FETs, MOSFETs Overview
The IRF840STRLPBF is a Vishay Siliconix N-channel power MOSFET in the IRF840S series, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 500 V and a continuous drain current of 8.0 A at 25 °C case temperature. The device has a maximum on-resistance of 0.85 Ω at VGS = 10 V and a total gate charge of 63 nC. It supports repetitive avalanche energy ratings and includes dynamic dV/dt specifications for robust switching performance.
Single FETs, MOSFETs Feature Summary
- Surface-mount construction in a D2PAK (TO-263) package designed for high-current applications
- Third-generation technology providing fast switching speeds and low on-resistance
- Repetitive avalanche rated capability for ruggedized device design
- Dynamic dV/dt rating to handle rapid voltage transitions during operation
Single FETs, MOSFETs Applications
- High-frequency power switching circuits
- DC-DC converter topologies requiring surface-mount integration
- Motor control systems utilizing third-generation MOSFETs
- General-purpose power management applications
Single FETs, MOSFETs Procurement Notes
Verify that the specific ordering suffix matches the required lead-free or halogen-free compliance status, as datasheets may cover both compliant and non-compliant variants. Confirm the tape and reel packaging format aligns with automated assembly requirements. Ensure the component meets RoHS directives if applicable to your manufacturing standards. Cross-reference the document revision date to confirm the latest electrical characteristics are being utilized.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount solution is required for high-voltage applications up to 500 V. The D2PAK package offers lower thermal resistance compared to through-hole alternatives while maintaining high current handling capabilities. Consider the 0.85 Ω on-resistance for efficiency calculations in load switching scenarios. Evaluate the gate charge requirements against available driver circuitry to ensure adequate switching speed.
Single FETs, MOSFETs Part Context
This part belongs to the IRF840S family of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to combine fast switching characteristics with cost-effectiveness. The IRF840S series utilizes advanced silicon technology to achieve low on-resistance within the D2PAK surface-mount form factor, making it suitable for modern compact power electronics designs.
Single FETs, MOSFETs Replacement Considerations
IRF840SPbF: Lead-free equivalent in the same D2PAK package with identical electrical characteristics. SiHF840S-GE3: Halogen-free and lead-free variant offering the same performance profile. IRF840STRLPBF: Direct replacement within the same product line ensuring pin compatibility and functional equivalence.
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