IRF8513PBF

FET, MOSFET Arrays Overview

The IRF8513PbF is a dual N-channel HEXFET Power MOSFET in an SO-8 package. It integrates two optimized transistors: Q1 (Control FET) with RDS(on) max 15.5 mΩ and ID 8.0 A, and Q2 (Synchronous FET) with RDS(on) max 12.7 mΩ and ID 11 A at VGS=10V. Both channels feature a BVDSS of 30 V, VGS(max) ±20 V, and TJ(max) 175°C. Q1 has PD 1.5 W and RθJA 100°C/W; Q2 has PD 2.4 W and RθJA 62.5°C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration optimized for synchronous buck operation to minimize conduction and switching losses.
• Low gate charge and low on-resistance parameters designed for high-efficiency DC-DC converters.
• Fully characterized avalanche voltage and current ratings for improved reliability under transient conditions.

FET, MOSFET Arrays Applications

• Point-of-load (POL) converters in notebook computers
• Server power supply circuits
• Graphics card power regulation
• Game console power management
• Set-top box DC-DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact Infineon/IR part number IRF8513PbF. Confirm the package type is SO-8 and the suffix PbF indicates lead-free compliance. Check the moisture sensitivity level and RoHS status against your manufacturing requirements. Ensure the supplier provides valid traceability documentation for this specific dual MOSFET variant.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-N-channel solution is required for low-voltage synchronous rectification. The device offers distinct control and synchronous FET characteristics within a single package. Evaluate thermal performance based on the specific junction-to-ambient resistance values for each channel under your PCB layout constraints.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family from Infineon Technologies (formerly International Rectifier). It utilizes advanced silicon technology to achieve low on-resistance per unit area. The dual configuration allows for space-saving designs in portable electronics where board real estate is limited compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum drain-to-source voltage for both channels?

Both Q1 and Q2 have a maximum drain-to-source breakdown voltage (BVDSS) of 30 V.

How does the continuous drain current differ between the two channels?

Q1 supports a continuous drain current of 8.0 A, while Q2 supports 11 A, both measured at VGS = 10V and TA = 25°C.

What is the maximum gate-to-source voltage rating?

The maximum gate-to-source voltage (VGS) is rated at ±20 V for both channels.