IRF8788PBF

Description：MOSFET N-CH 30V 24A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:3ccaf233bb0d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF8788PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 24A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF8788PBF

Description：MOSFET N-CH 30V 24A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5720 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for IRF8788PBF

IRF8788PBF

Single FETs, MOSFETs Overview

The IRF8788PbF is a single N-channel HEXFET Power MOSFET housed in an industry-standard SO-8 surface-mount package. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 24A at 25°C. The device exhibits a maximum on-resistance of 2.8mΩ at VGS=10V and 3.8mΩ at VGS=4.5V, with a typical total gate charge of 44nC at 4.5V. Thermal performance includes a junction-to-ambient thermal resistance of 50°C/W and a maximum operating junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous buck operation to minimize conduction and switching losses
Features ultra-low gate impedance and very low gate charge
Fully characterized for avalanche voltage and current capabilities
Includes a 20V maximum gate rating

Single FETs, MOSFETs Applications

Synchronous MOSFET for notebook processor power
Synchronous rectifier MOSFET for isolated DC-DC converters
High efficiency DC-DC converters for notebook applications

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon or International Rectifier datasheets to confirm pinout compatibility and absolute maximum ratings. Ensure the specific ordering suffix matches the required packaging format. Confirm that the application environment remains within the specified thermal limits and voltage constraints defined in the technical documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low RDS(on) at logic-level gate voltages to enhance efficiency in synchronous rectification. Consider the SO-8 package dimensions for PCB layout constraints. Evaluate the thermal resistance characteristics against the expected power dissipation to ensure adequate heat sinking or copper area allocation for the target ambient temperature.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, utilizing silicon technology optimized for high-frequency switching applications. The SO-8 package provides a compact footprint suitable for space-constrained consumer electronics. The device is designed specifically for the demands of modern processor power delivery systems.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage, current, and thermal specifications while fitting the SO-8 footprint.