IRF8852TRPBF

$0.82

Description：MOSFET 2N-CH 25V 7.8A 8TSSOP
Series：HEXFET®

SKU:eceb87766d43 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF8852TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 25V 7.8A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF8852TRPBF

Description：MOSFET 2N-CH 25V 7.8A 8TSSOP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：7.8A
Rds On (Max) @ Id, Vgs：11.3mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1151pF @ 20V
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF8852TRPBF

IRF8852TRPBF

FET, MOSFET Arrays Overview

The IRF8852TRPBF is a dual N-channel HEXFET power MOSFET in a TSSOP-8 package. It features an ultra-low on-resistance of 11.3mΩ at VGS=10V and 15.4mΩ at VGS=4.5V, with continuous drain currents of 7.8A and 6.2A respectively. The device has a 25V breakdown voltage, low profile (<1.1mm), and operates within a -55°C to +150°C junction temperature range.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for compact circuit designs
Ultra-low on-resistance per silicon area
TSSOP-8 package with 45% less footprint than SO-8
Low profile suitable for thin portable electronics

FET, MOSFET Arrays Applications

Battery management systems
Load management circuits
Portable electronics
PCMCIA cards

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact Infineon part number IRF8852TRPBF. Confirm the package type is TSSOP-8 and that it is lead-free and RoHS compliant. Check datasheet revisions for any updates to thermal or electrical ratings before integration.

FET, MOSFET Arrays Selection Notes

Select this component when board space is limited due to its small TSSOP-8 footprint. It is suitable for applications requiring dual N-channel MOSFETs with low conduction losses. Ensure gate drive voltages align with the specified RDS(on) conditions for optimal performance.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family from Infineon Technologies (formerly International Rectifier). It utilizes advanced processing techniques to achieve low on-resistance. The TSSOP-8 package provides a significant reduction in PCB area compared to standard SO-8 packages.