IRF8910TRPBFXTMA1

FET, MOSFET Arrays Overview

The IRF8910TRPBFXTMA1 is a dual N-channel HEXFET power MOSFET in an SO-8 package. It features a 20V drain-to-source voltage and a maximum continuous drain current of 10A at 25°C. The device exhibits a maximum on-resistance of 13.4mΩ at VGS=10V and 18.3mΩ at VGS=4.5V. Total gate charge is typically 7.4nC at 4.5V, with a gate-drain charge of 2.5nC. Thermal resistance junction-to-ambient is 62.5°C/W, supporting operation up to 150°C.

FET, MOSFET Arrays Feature Summary

• Very low RDS(on) at 4.5V VGS
• Ultra-low gate impedance
• Fully characterized avalanche voltage and current

FET, MOSFET Arrays Applications

• Dual SO-8 MOSFET for POL converters in desktops
• Servers and graphics cards
• Game consoles and set-top boxes

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Infineon datasheet v01_01 to confirm pinout compatibility and electrical ratings. Ensure the SO-8 package matches the design footprint. Check for lead-free compliance status as specified in the product documentation. Confirm that the operating temperature range meets the system requirements before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low gate drive power due to ultra-low gate impedance. The low on-resistance at 4.5V makes it suitable for logic-level control. Consider the thermal resistance when designing heat dissipation for POL converters. Verify that the 20V rating provides sufficient margin for the specific circuit voltage levels.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes planar strip technology to achieve low on-resistance. The dual configuration allows for compact designs in synchronous rectification or half-bridge applications within the SO-8 form factor.

FET, MOSFET Arrays Replacement Considerations

Consult the Infineon cross-reference search tool for verified substitutes. Ensure any replacement maintains the SO-8 package and 20V rating. Verify that the substitute offers comparable gate charge and on-resistance characteristics.

FET, MOSFET Arrays FAQ

What is the typical total gate charge?

The typical total gate charge is 7.4nC at VGS=4.5V.

Is the device fully characterized for avalanche conditions?

Yes, the datasheet states it is fully characterized for avalanche voltage and current.

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage rating is ±20V.