IRF9358PBF

FET, MOSFET Arrays Overview

The IRF9358PBF is a dual P-channel HEXFET power MOSFET housed in an SO-8 package. It features a maximum drain-to-source voltage of -30 V and a continuous drain current of -9.2 A at 25°C. The device exhibits a maximum on-resistance of 16.3 mΩ at VGS = -10V and 23.8 mΩ at VGS = -4.5V. Total gate charge is typically 19 nC, with a junction temperature range of -55 to +150 °C.

FET, MOSFET Arrays Feature Summary

• Industry-standard SO-8 package ensures multi-vendor compatibility
• RoHS compliant construction containing no lead, bromide, or halogen
• MSL1 consumer qualification for increased reliability

FET, MOSFET Arrays Applications

• Charge and discharge switch for notebook PC battery applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix (PbF or TRPbF) against project requirements. Confirm that the component meets RoHS standards and MSL1 classification. Ensure thermal management aligns with the specified power dissipation limits. Check for any required written approvals if used in life-support systems.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage dual-channel switching where compact surface-mount packaging is required. Evaluate the trade-off between the 16.3 mΩ on-resistance and the 2 W power dissipation limit. Consider the -30 V rating for appropriate system voltage margins.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET family, utilizing planar trench technology for power MOSFETs. The dual configuration integrates two independent P-channel devices within a single SO-8 footprint, optimizing board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.