IRF9362TRPBF

FET, MOSFET Arrays Overview

The IRF9362TRPBF is a P-channel HEXFET power MOSFET in an industry-standard SO-8 surface-mount package. It features a -30 V drain-to-source voltage rating and supports continuous drain currents of -8.0 A at 25°C and -6.4 A at 70°C. The device exhibits a maximum on-resistance of 21.0 mΩ at -10 V gate drive and 32.0 mΩ at -4.5 V. With a typical total gate charge of 13 nC, it enables efficient switching performance suitable for low-voltage power management applications.

FET, MOSFET Arrays Feature Summary

• Industry-standard SO-8 package ensures multi-vendor compatibility
• RoHS compliant construction containing no lead, bromide, or halogen
• Low gate charge facilitates efficient switching operations
• Enhanced avalanche ruggedness for robust circuit protection

FET, MOSFET Arrays Applications

• Low side switching circuits for power supplies
• Motor driver implementations
• Power distribution networks
• General purpose load switches

FET, MOSFET Arrays Procurement Notes

Verify the component matches the exact Infineon Technologies part number IRF9362TRPBF. Confirm the presence of the TRP suffix indicating tape and reel packaging with a standard quantity of 4000 units per reel. Ensure the datasheet version aligns with current Infineon specifications to validate all electrical parameters before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when a compact P-channel solution is required for low-voltage environments. The SO-8 package provides a balance between thermal dissipation capabilities and board space efficiency. Evaluate the specific gate drive voltage requirements against the provided on-resistance curves to ensure optimal conduction losses are achieved within the target operating temperature range.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar strip technology to achieve high packing density and superior on-resistance characteristics. The product line is designed to meet stringent reliability standards for consumer and industrial electronic applications requiring efficient power control.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include the IRF9362PbF for tube/bulk packaging variants. Cross-reference with other P-channel MOSFETs sharing identical -30 V ratings and comparable SO-8 footprints if pinout compatibility is critical. Verify that substitute components meet the same thermal resistance and avalanche energy specifications.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current at elevated temperatures?

The maximum continuous drain current decreases to -6.4 A when the ambient temperature reaches 70°C.

Does the device support unclamped inductive switching?

Yes, the datasheet specifies avalanche characteristics, including single pulse avalanche energy and avalanche current ratings.

What is the specified gate threshold voltage range?

The gate threshold voltage ranges from a minimum of -1.3 V to a maximum of -2.4 V under standard test conditions.