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IRF9395MTRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET 2P-CH 30V 14A DIRECTFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRF9395MTRPBF
- Description：MOSFET 2P-CH 30V 14A DIRECTFET
- Series：DirectFET™
- Mfr：International Rectifier
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 75A (Tc)
- Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：64nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：3241pF @ 15V
- Power - Max：2.1W (Ta), 57W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：DirectFET™ Isometric MC
- Supplier Device Package：DirectFET™ Isometric MC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRF9395MTRPBF
FET, MOSFET Arrays Overview
The IRF9395MTRPBF is a dual P-channel MOSFET array from Infineon Technologies, housed in a surface-mount DirectFET MC package. It features a drain-source voltage rating of 30V and a continuous drain current of 14A at 25°C. The device exhibits a maximum on-resistance of 7 milliohms at Vgs=10V and Id=14A. Key dynamic parameters include a maximum gate charge of 64nC at 10V and an input capacitance of 3241pF at 15V. It operates within a junction temperature range of -40°C to 150°C with a maximum power dissipation of 2.1W.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration integrated into a single surface-mount unit for space-efficient circuit design.
- DirectFET MC packaging provides thermal management capabilities suitable for high-power density applications.
- Logic-level gate threshold enables direct drive from standard logic interfaces.
FET, MOSFET Arrays Applications
- High-side load switching in portable computing devices
- Battery protection circuits in mobile electronics
- Power distribution networks in notebook and desktop adapters
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized channels as the part status is End-of-Life. Confirm package integrity upon receipt due to moisture sensitivity requirements. Ensure storage conditions comply with JESD22-A114 standards to prevent lead oxidation or internal damage before reflow soldering processes are initiated.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual P-channel solution is required for 30V systems. The low on-resistance supports efficient power handling in load switch applications. Evaluate thermal constraints carefully given the 2.1W power dissipation limit in the specific DirectFET package geometry during continuous operation.
FET, MOSFET Arrays Part Context
This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents a transition period product where International Rectifier branding was integrated into Infineon's portfolio. The DirectFET technology focuses on minimizing parasitic inductance and improving thermal performance compared to traditional packages.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers: IRF9395MTR1PBF.
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