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IRF9520NSTRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 6.8A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF9520NSTRR
- Description：MOSFET P-CH 100V 6.8A D2PAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：480mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRF9520NSTRR
Single FETs, MOSFETs Overview
The IRF9520NSTRR is a P-Channel Power MOSFET manufactured by Infineon Technologies. It utilizes advanced HEXFET process technology to deliver high-performance switching capabilities in a surface-mount package. The device is characterized by a drain-source voltage rating of -100V and a continuous drain current of 6.8A at 25°C. Its maximum on-resistance is specified at 0.6 ohms, ensuring efficient power handling. The component operates with a junction temperature range up to 175°C and features an avalanche-rated design for robustness against transient energy events.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced HEXFET process technology for optimized performance
- Features fully avalanche-rated construction for enhanced reliability
- Supports operation at elevated junction temperatures up to 175°C
- Designed for fast switching applications with low thermal resistance
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management systems
- Motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer origin, as this part number may be sourced from International Rectifier or Vishay under the Infineon portfolio. Confirm that the ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives if lead-free variants are mandated for the assembly process. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with a 100V breakdown voltage is required for medium-current applications. The 0.6 ohm on-resistance makes it suitable for general-purpose switching where moderate conduction losses are acceptable. Consider the TO-263 (D2PAK) package constraints regarding thermal dissipation and PCB layout requirements. Evaluate the gate charge specifications against the driving circuit capabilities to ensure adequate switching speeds.
Single FETs, MOSFETs Part Context
This device belongs to the HEXFET family of power MOSFETs, known for combining high voltage capability with low on-resistance. Originally developed by International Rectifier, the product line was integrated into Infineon's portfolio following corporate acquisitions. The NSTRR suffix typically denotes a specific reel quantity and packaging style within the D2PAK form factor, distinguishing it from through-hole or smaller surface-mount alternatives.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include the IRF9520NS and IRF9520NL, which share identical electrical characteristics but differ in packaging type. Verify pinout compatibility and thermal pad dimensions when transitioning between manufacturers such as Vishay or STMicroelectronics offering equivalent P-Channel devices.
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