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IRF9530NL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 14A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF9530NL
- Description：MOSFET P-CH 100V 14A TO262
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：200mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for IRF9530NL
Single FETs, MOSFETs Overview
The IRF9530NL is a P-Channel enhancement mode power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It utilizes advanced process technology to achieve low on-resistance and fast switching speeds. The device features a TO-262 (D2PAK) package designed for surface mount applications, offering high current capability with low internal connection resistance. Key electrical parameters include a drain-source voltage of -100V, a continuous drain current of -14A at 25°C case temperature, and a maximum on-resistance of 0.20Ω. It supports an operating junction temperature up to 175°C and is fully avalanche rated.
Single FETs, MOSFETs Feature Summary
- Fully avalanche rated ruggedized device design
- Advanced processing techniques for low on-resistance per silicon area
- Fast switching speed characteristics
- Suitable for high current applications due to low internal connection resistance
Single FETs, MOSFETs Applications
- High current surface mount power applications
- Commercial-industrial power dissipation levels
- Low-profile through-hole or surface mount designs
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'NL' against official Infineon documentation to confirm the package type, as datasheets often distinguish between NS (surface mount D2PAK) and NL (low-profile through-hole). Ensure the ordering part number matches the required mounting style and lead-free status specified in the manufacturer's current product availability list.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a P-Channel MOSFET with -100V breakdown and -14A continuous current capability. Consider the thermal resistance values provided in the datasheet for heat sink requirements. Verify that the gate drive voltage is sufficient to achieve the specified low on-resistance performance.
Single FETs, MOSFETs Part Context
This component belongs to the Fifth Generation HEXFET Power MOSFETs family from International Rectifier, now part of Infineon Technologies. These devices are known for combining extremely low on-resistance with fast switching speeds. The TO-262 package variant provides a balance between power handling and mounting flexibility for industrial use.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the HEXFET P-Channel lineup such as IRF9530NS for surface mount equivalents. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' parts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
