IRF9952

FET, MOSFET Arrays Overview

The IRF9952 is a dual-channel power MOSFET array from Infineon Technologies, integrating one N-channel and one P-channel device within a single surface-mount package. It utilizes HEXFET technology to achieve low on-resistance per silicon area. The component supports a drain-source voltage of 30V with continuous drain currents of 3.5A for the N-channel and 2.3A for the P-channel at 25°C. Key electrical parameters include a maximum gate threshold voltage of 3V at 250µA, a maximum gate charge of 14nC at 10V, and an input capacitance of 190pF at 15V. The device operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a single compact package to reduce board space.
• Utilizes advanced HEXFET processing techniques to achieve extremely low on-resistance per silicon area.
• Features fast switching speeds and improved repetitive avalanche ratings for reliable performance.
• Designed with enhanced thermal characteristics suitable for surface mount applications.

FET, MOSFET Arrays Applications

• Power management circuits requiring complementary switching pairs
• DC-DC converter topologies utilizing half-bridge configurations
• Motor control driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix (e.g., QTR vs PBF) to confirm packaging type, as the base number covers multiple variants. Confirm automotive qualification status if required, as standard commercial versions may differ from AEC-Q101 qualified parts. Check current product lifecycle status, as older International Rectifier designs may be discontinued or subject to last-time buys. Ensure the selected variant matches the required tape-and-reel or tube packaging for your assembly line.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is needed for synchronous rectification or high-side/low-side driving. Verify that the 30V rating exceeds the maximum circuit voltage with adequate margin. Consider the 8-SOIC package size constraints and thermal dissipation requirements, as the total power dissipation is limited to 2W. Ensure the logic-level gate drive capability aligns with the controller's output voltage levels.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET family of power MOSFETs, originally developed by International Rectifier before its acquisition by Infineon Technologies. The IRF9952 specifically addresses the need for compact, dual-channel solutions in low-voltage power applications. It represents a transition point where advanced planar technology was integrated into small surface-mount packages to improve power density.

FET, MOSFET Arrays Replacement Considerations

Direct replacements include the IRF9952QPBF for lead-free compliance verification. For automotive applications, verify if the AUIRF9952QTR is the appropriate qualified alternative. Cross-reference with other dual N/P channel SO-8 devices from the same manufacturer ensuring identical pinout and electrical specifications.