IRF9952PBF

FET, MOSFET Arrays Overview

The IRF9952PBF is a dual-channel N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a surface-mount 8-SOIC package with a drain-source voltage of 30V and a continuous drain current of 4.7A at 25°C. The device exhibits a maximum on-resistance of 16 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 12nC at 10V, an input capacitance of 190pF at 15V, and a threshold voltage of 1V at 250µA. It supports a junction temperature range from -55°C to 150°C and offers a maximum power dissipation of 2W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SO-8 package for space-efficient designs
• Advanced HEXFET processing technology for ultra-low on-resistance
• Fast switching speed capabilities for efficient power conversion
• Improved repetitive avalanche rating for enhanced reliability

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Power management systems
• Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer source, as the component originated from International Rectifier before its acquisition by Infineon. Confirm RoHS compliance status and check for obsolescence notices or lifecycle changes. Ensure the ordering part number matches the required tape and reel or tube packaging options if applicable to the production line.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low RDS(on) in a small footprint. Compare the 30V rating against system voltage peaks. Evaluate thermal performance based on the 2W dissipation limit and SO-8 package thermal resistance. Consider the 1V threshold voltage for logic-level driving compatibility.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs, known for high efficiency and robust performance. It utilizes advanced processing techniques to minimize silicon area while maintaining low resistance. The dual-channel design allows for synchronized control in bridge configurations, reducing board space compared to discrete single-channel solutions.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET series. Verify that substitute parts meet the 30V VDS and 4.7A ID requirements. Ensure thermal characteristics and package dimensions match the existing PCB layout constraints.