IRF9952TR

$0.97

Description：MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Series：HEXFET®

SKU:34390d6ea2e8 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF9952TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 3.5A/2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9952TR

Description：MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.5A, 2.3A
Rds On (Max) @ Id, Vgs：100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：190pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF9952TR

IRF9952TR

FET, MOSFET Arrays Overview

The AUIRF9952TR is an automotive-grade dual MOSFET array from Infineon Technologies, featuring one N-channel and one P-channel device in a single 8-SO package. It operates with a drain-source voltage of 30V and supports continuous drain currents of 3.5A for the N-channel and 2.3A for the P-channel at 25°C. The component utilizes logic-level gate drive technology, ensuring efficient switching performance. Key electrical parameters include a maximum on-resistance of 100 milliohms at 10V gate drive, a maximum gate charge of 14nC, and a maximum input capacitance of 190pF. It is designed for surface-mount installation and functions within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Automotive-grade reliability compliant with AEC-Q101 standards
Integrated N-channel and P-channel MOSFETs in a compact dual configuration
Logic-level gate drive capability for direct microcontroller interfacing

FET, MOSFET Arrays Applications

Automotive power management systems
Motor control circuits
Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'Q' or 'TR' against official documentation to confirm packaging and automotive qualification status. Confirm current product availability as some listings indicate end-of-life status. Ensure the source document explicitly identifies the part as an automotive-grade component before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a combined N/P-channel solution is required for space-constrained automotive designs. Verify that the 30V rating and current capabilities meet the specific circuit requirements. Confirm compatibility with logic-level control signals to ensure optimal switching efficiency without excessive gate drive power.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's HEXFET® family of power MOSFETs. The 'AU' prefix typically denotes automotive qualification. It serves as a dual-channel alternative to using separate discrete N-channel and P-channel devices, simplifying PCB layout and reducing component count in bridge driver or load switch topologies.