FET, MOSFET Arrays IRF9953TR product image

IRF9953TR

$0.50
  • Description:MOSFET 2P-CH 30V 2.3A 8SO
  • Series:HEXFET®

SKU:ea9a21ba5116 Category: Brand:

  
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IRF9953TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 2.3A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9953TR

  • Description:MOSFET 2P-CH 30V 2.3A 8SO
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.3A
  • Rds On (Max) @ Id, Vgs:250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for IRF9953TR

IRF9953TR

FET, MOSFET Arrays Overview

The IRF9953TR is a dual P-channel MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features an 8-pin SOIC surface-mount package with a maximum continuous drain current of -2.3 A and a drain-source voltage rating of -30 V. The device exhibits a typical on-resistance of 0.165 ohms at a gate-source voltage of -10 V, with a threshold voltage of -1 V. Maximum power dissipation is rated at 2 W, and the component supports operating junction temperatures up to 150°C.

FET, MOSFET Arrays Feature Summary

  • Integrates two independent P-channel MOSFETs within a single compact surface-mount package for space-efficient circuit design.
  • Provides high-side switching capability suitable for low-voltage load management applications.
  • Features automotive-grade reliability standards including moisture sensitivity level 1 for unrestricted handling.

FET, MOSFET Arrays Applications

  • Low-side and high-side load switching in portable electronic devices
  • Power distribution circuits in consumer electronics
  • Battery protection and management systems

FET, MOSFET Arrays Procurement Notes

Verify the complete part number against official Infineon documentation, as suffixes such as TRPBF indicate specific tape-and-reel packaging and lead-free compliance. Confirm RoHS status and availability through authorized distributors, as standard inventory levels may fluctuate. Ensure the ordering code matches the required package variant and environmental specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel configuration is required in a small form factor. The -30 V rating suits low-voltage DC systems, while the 2.3 A current capacity supports moderate load requirements. Consider the 0.165 ohm on-resistance for thermal management efficiency in compact designs where heat dissipation is limited.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET family of power MOSFETs, known for optimized performance in switching applications. The dual configuration allows for synchronized control or complementary switching arrangements within a single footprint, reducing board space compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

The IRF9953PBF serves as a tube-packaged alternative to the TR variant. Verify pin compatibility and electrical parameters when substituting between packaging types to ensure mechanical fit and functional equivalence in existing layouts.

IRF9953TRIRF9953TR
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