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IRF9953TR is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2P-CH 30V 2.3A 8SO. Review the specifications below when checking this part for your BOM.
The IRF9953TR is a dual P-channel MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features an 8-pin SOIC surface-mount package with a maximum continuous drain current of -2.3 A and a drain-source voltage rating of -30 V. The device exhibits a typical on-resistance of 0.165 ohms at a gate-source voltage of -10 V, with a threshold voltage of -1 V. Maximum power dissipation is rated at 2 W, and the component supports operating junction temperatures up to 150°C.
Verify the complete part number against official Infineon documentation, as suffixes such as TRPBF indicate specific tape-and-reel packaging and lead-free compliance. Confirm RoHS status and availability through authorized distributors, as standard inventory levels may fluctuate. Ensure the ordering code matches the required package variant and environmental specifications before finalizing procurement orders.
Select this component when a dual P-channel configuration is required in a small form factor. The -30 V rating suits low-voltage DC systems, while the 2.3 A current capacity supports moderate load requirements. Consider the 0.165 ohm on-resistance for thermal management efficiency in compact designs where heat dissipation is limited.
This device belongs to the HEXFET family of power MOSFETs, known for optimized performance in switching applications. The dual configuration allows for synchronized control or complementary switching arrangements within a single footprint, reducing board space compared to discrete solutions.
The IRF9953PBF serves as a tube-packaged alternative to the TR variant. Verify pin compatibility and electrical parameters when substituting between packaging types to ensure mechanical fit and functional equivalence in existing layouts.
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