IRF9956TRPBF

FET, MOSFET Arrays Overview

The IRF9956TRPBF is a dual N-channel power MOSFET from Infineon Technologies, housed in an SO-8 surface-mount package. It utilizes Fifth Generation HEXFET technology to achieve ultra-low on-resistance per silicon area. The device features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 3.5 A at 25°C. Maximum on-resistance (RDS(on)) is specified at 100 mΩ at 10 V gate drive and 200 mΩ at 4.5 V. Typical gate charge (QG) is 6.9 nC at 10 V, with a typical gate-drain charge (Qgd) of 1.8 nC. The junction temperature (TJ) maximum is 150 °C, and thermal resistance from junction to ambient (RthJA) is 62.5 K/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single SO-8 package for space-efficient designs.
• Fifth Generation HEXFET technology providing extremely low on-resistance.
• Very low gate charge and switching losses for improved efficiency.
• Fully avalanche rated for ruggedized device performance.

FET, MOSFET Arrays Applications

• DC-DC converters
• Power management circuits
• Load switches

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPBF to confirm tape-and-reel packaging and lead-free compliance. Confirm that the component meets RoHS standards as indicated in official documentation. Check for any recent lifecycle status updates, such as End-of-Life or Not Recommended for New Designs, directly from Infineon's official channels before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact dual N-channel solution with low voltage ratings. The SO-8 package suits surface-mount assembly processes. Ensure the gate drive voltage aligns with the RDS(on) specifications, noting higher resistance at lower gate voltages like 4.5 V compared to 10 V. Consider the thermal constraints given the RthJA value for the specific PCB layout.

FET, MOSFET Arrays Part Context

This part belongs to the HEXFET Power MOSFET family, known for high reliability and efficiency. It is manufactured by Infineon Technologies, formerly International Rectifier. The IRF9956 series represents a cost-effective option for low-voltage power switching applications where moderate current handling and small footprint are prioritized.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with IRF9956PBF for leaded version compatibility. Verify pinout and electrical parameters against other 30V dual N-channel MOSFETs in SO-8 packages if sourcing alternatives.

FET, MOSFET Arrays FAQ

What is the maximum drain-source voltage for the IRF9956?

The maximum drain-source voltage (VDS) is 30 V.

Is the IRF9956 fully avalanche rated?

Yes, the device is fully avalanche rated according to its datasheet.

What is the typical gate charge at 10 V?

The typical total gate charge (QG) is 6.9 nC when measured at a gate-to-source voltage of 10 V.