IRF9956TRPBFXTMA1

FET, MOSFET Arrays Overview

The IRF9956TRPBFXTMA1 is a dual N-channel power MOSFET from Infineon Technologies, housed in an SO-8 surface-mount package. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 3.5 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 100 mΩ at a gate-source voltage (VGS) of 10 V, and 200 mΩ at 4.5 V. Key switching parameters include a typical total gate charge (QG) of 6.9 nC at 10 V and a typical gate-drain charge (Qgd) of 1.8 nC. Thermal performance is characterized by a maximum junction-to-ambient thermal resistance (RthJA) of 62.5 K/W, with a maximum operating junction temperature (Tj) of 150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact SO-8 package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient power switching at 10 V and 4.5 V gate drives.
• Reduced gate charge values to support high-frequency operation and lower driving losses.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring low-voltage synchronous rectification.
• Load switching applications in portable electronic devices.
• Power management systems for automotive infotainment or body control modules.

FET, MOSFET Arrays Procurement Notes

Verify the complete part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific ordering code matches the required tape-and-reel packaging format. Cross-reference technical specifications directly with the manufacturer's datasheet to validate electrical limits and thermal ratings prior to integration into final designs.

FET, MOSFET Arrays Selection Notes

Select this component for applications demanding a dual N-channel solution in an SO-8 footprint with a 30 V voltage rating. Evaluate the 100 mΩ RDS(on) at 10 V drive for optimal efficiency in standard logic-level switching scenarios. Consider the 62.5 K/W thermal resistance for PCB layout planning to ensure adequate heat dissipation without active cooling mechanisms.

FET, MOSFET Arrays Part Context

This component belongs to Infineon's portfolio of planar MOSFET technologies designed for general-purpose power switching. The IRF9956 series provides a dual-channel alternative to single discrete packages, facilitating simplified board layouts. It targets markets where moderate current handling and low voltage operation are primary design constraints.

FET, MOSFET Arrays Replacement Considerations

Consult Infineon's cross-reference tools for verified equivalent parts. Ensure any substitute maintains identical pinout compatibility and meets or exceeds the 30 V VDS and 3.5 A ID requirements. Verify thermal and electrical parameter alignment before implementation.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating for the IRF9956?

The maximum allowable gate-source voltage (VGS) is ±20 V.

Does the IRF9956 support avalanche energy ratings?

Yes, the device supports avalanche energy ratings as detailed in the official Infineon application notes regarding MOSFET linear mode operation and avalanche facts.

What is the minimum gate-source threshold voltage?

The minimum gate-source threshold voltage (VGS(th)) is specified as 1 V.