IRF9Z14STRLPBF

$1.40

Description：MOSFET P-CH 60V 6.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b467e6107ec6 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF9Z14STRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 6.7A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9Z14STRLPBF

Description：MOSFET P-CH 60V 6.7A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 43W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF9Z14STRLPBF

IRF9Z14STRLPBF

Single FETs, MOSFETs Overview

The IRF9Z14STRLPBF is a Vishay Siliconix P-channel power MOSFET utilizing advanced third-generation processing. It features a D2PAK (TO-263) surface-mount package with an integrated thermal pad for efficient heat dissipation. The device provides a drain-source voltage of -60 V and a continuous drain current of -6.7 A at 25 °C case temperature. Key electrical parameters include a maximum on-resistance of 0.5 Ω at VGS = -10 V, a total gate charge of 12 nC, and a single pulse avalanche energy rating of 140 mJ. It supports a junction temperature range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling low on-resistance per silicon area
Fast switching characteristics suitable for high-frequency applications
Fully avalanche rated for ruggedized operation
D2PAK package designed for high current capability

Single FETs, MOSFETs Applications

High current power switching circuits
DC-DC converter topologies
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and packaging type. Ensure that the selected variant matches the required RoHS compliance level and reel specifications for automated assembly processes. Cross-reference the part number with the latest datasheet revision to validate any updates to absolute maximum ratings or thermal resistance values before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount P-channel MOSFET with robust avalanche capability is required. The D2PAK package offers superior thermal performance compared to standard SMD packages. Evaluate the 0.5 Ω on-resistance against circuit loss requirements and ensure the driving voltage aligns with the specified VGS threshold for optimal conduction. Consider the 175 °C operating limit for high-temperature environments.

Single FETs, MOSFETs Part Context

This part belongs to the IRF9Z14S family of Vishay Siliconix power MOSFETs. It shares core electrical characteristics with the through-hole IRF9Z14L variant but utilizes a surface-mount D2PAK footprint. The series is characterized by its fast switching speed and high reliability, making it a standard choice for general-purpose power management designs requiring P-channel configuration.