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IRF9Z30 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 50V 18A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF9Z30
- Description：MOSFET P-CH 50V 18A TO220AB
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：140mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IRF9Z30
Single FETs, MOSFETs Overview
The IRF9Z30 is a P-channel silicon MOSFET manufactured by Vishay Siliconix, housed in a TO-220-3 package. It features a drain-source breakdown voltage of 50 V and supports a continuous drain current of 18 A. The device exhibits a maximum on-resistance of 140 mΩ at a gate-source voltage of -10 V. Electrical characteristics include a gate threshold voltage of 4 V, a total gate charge of 39 nC, and a power dissipation rating of 74 W. Operating temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Enhancement-mode P-channel silicon construction for reliable switching operations
- Low on-resistance design optimized for efficient power handling
- Robust thermal management capabilities within the TO-220-3 through-hole package
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power switching applications
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity and datasheet alignment before integration. Confirm RoHS compliance status as historical records indicate non-compliance with lead-free standards. Ensure the specific ordering suffix matches the required environmental specifications for your manufacturing process.
Single FETs, MOSFETs Selection Notes
Select this component when a 50 V P-channel MOSFET with high current capacity is required. Compare the 140 mΩ on-resistance against system loss requirements. Verify that the TO-220-3 package fits the available PCB real estate and thermal constraints.
Single FETs, MOSFETs Part Context
This part belongs to the IRF9Z series of power MOSFETs designed for general-purpose switching. It serves as a complement to N-channel variants in bridge configurations. The TO-220-3 form factor facilitates easy mounting onto heat sinks for effective thermal dissipation in industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified cross-reference part numbers. Do not substitute without confirming pinout compatibility and electrical parameter equivalence.
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